Enhanced resistive switching effect in Ag nanoparticle embedded BaTiO₃ thin films

摘要

Ag nanoparticle (NP) embedded BaTiO₃ (BTO) thin films on SrRuO₃-coated SrTiO₃ (STO) substrates are prepared by the integrated nanocluster beam deposition and laser-molecular beam epitaxy. Enhanced resistive switching, up to an ON/OFF ration of 10⁴, has been achieved at low switching voltage (less than 1 V) without a forming voltage. These characteristics make such nanocomposite film very promising for application of low voltage non-volatile random access memory. The enhanced resistive switching effect may be attributed to the charge storage effect of the Ag nanoparticles and easy formation of Ag filament inside the BTO film.